OB欧宝体育

陶明

一、 基本情况

陶明,女,汉族,中共党员,籍贯湖北武汉,OB欧宝体育电子系,助理教授。

电话:13811581927

微信号:U201014078

E-mailtming@hnu.edu.cn


二、 教育背景与工作经历

2010.09~2014.06  华中科技大学 电子科学与技术 学士

2014.09~2020.06  北京大学 微电子学与固体电子学 博士

2020.09~至今 湖南大学 OB欧宝体育 助理教授


三、主要研究方向

1GaN功率半导体器件工艺开发及相关测试、仿真分析研究

2、亚10纳米高端半导体工艺和器件设计工具(ab-initio TCAD)研发

3、基于第一性原理计算及分子动力学分析研究新型功率半导体器件的工艺优化及器件可靠性问题


四、所在团队简介

所在科研团队主要研究方向有四个:1、硬件芯片:非冯诺依曼架构新型AI芯片研发;2、软件算法:新型人工智能算法研究及软件研发;3、亚10纳米高端半导体工艺和器件设计工具(ab-initio TCAD)研发4、亚10纳米高端芯片光刻相关设计优化工具研发。本团队研究方向为上述4方面内容的深度融合,通过12的深度协同优化,研发高性能计算设计技术,以支撑34的设计和优化。在这里,可以与不同学科背景的老师和学生一起交流学习,进行思想的深度碰撞。欢迎具有数学、物理、电子、计算机等学科背景的学生报考博士、硕士研究生,加入我们这个大家庭。


五、主要科研论文

1Ming Tao, Shaofei Liu, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kai Cheng, Bo Shen, and Maojun Wang, Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma Free, Self-Terminated Gate Recess Process,” IEEE Transactions on Electron Devices, 2018, 65(4):1453-1457.

2Ming Tao, Maojun Wang, Shaofei Liu, Bing Xie, Min Yu, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, and Bo Shen, Buffer Induced Time Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon, IEEE Transactions on Electron Devices, 2016, 63(12):4860-4864.

3Ming Tao, Maojun Wang, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kai Cheng, and Bo Shen, Kilovolt GaN MOSHEMT on Silicon Substrate with Breakdown Electric Field Close to the Theroretical Limit, IEEE 29th International Symposium on Power Semiconductors Devices & ICs (ISPSD), 2017, pp. 93-96.

4Ming Tao, Maojun Wang, Shaofei Liu, Cheng P. Wen, Jinyan Wang, Yilong Hao, and Wengang Wu, The Role of Buffer Traps on the Time Dependent Off-State Leakage in AlGaN/GaN MIS-HEMT on Silicon, 12th International Conference on Nitride Semiconductors (ICNS), 24 July.-28 July. 2017.

5Shaofei Liu, Maojun Wang, Ming Tao, Ruiyuan Yin, Jingnan Gao, Haozhe Sun, Wei Lin, Cheng P. Wen, Jinyan Wang, Wengang Wu, Yilong Hao, Zhaofu Zhang, Kevin J. Chen, and Bo Shen, Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers,” IEEE Electron Device Lett, 2017, 38(8):1075-1078.

6 Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong, Hao, Wengang Wu, Jun Xu, Kai Cheng, and Bo Shen, A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices,” IEEE Electron Device Lett, 2016, 37(4):377-380.

7 Fei Sang, Maojun Wang, Ming Tao, Shao Fei, Min Yu, Bing Xie, Cheng P. Wen, Jingyan Wang, Wengang Wu, Yilong Hao, and Bo Shen, Time Dependent Threshold Voltage Drift Induced by Interface Traps in Normally-off GaN MOSFET with Different Gate Recess Technique,” Applied Physics Express, 2016, 9(9):091001.

8 Fei Sang, Maojun Wang, Ming Tao, Investigation of the Threshold Voltage Drift in Enhancement Mode GaN MOSFET under Negative Gate Bias Stress, Japanese Journal of Applied Physics, 2015, 54(4):044101.1-044101.4.


六、申请专利

1、 王茂俊,陶明,一种提高GaN增强型MOSFET阈值电压的新型外延层结构,已申请(专利号:201811422595.4,申请日期:20181127日)

2、 王茂俊,陶明,张川,郝一龙,双脉冲软开关测试法区分GaN HEMT表面及缓冲层电流坍塌,已授权(专利号:201610117520X,授权日期:2019111日)

3、 王茂俊,沈波,陶明,刘少飞,郝一龙,一种利用新型势垒层提高GaN增强型沟道迁移率的器件结构及实现方法,已申请(专利号:201710196720.3,申请日期:2017329日)